A High Isolation Series-Shunt RF MEMS Switch
نویسندگان
چکیده
منابع مشابه
A High Isolation Series-Shunt RF MEMS Switch
This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order...
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According to contact type, RF MEMS switches are generally classified into two categories: Capacitive switches and Metal-to-Metal ones. The capacitive switches are capable to tolerate a higher frequency range and more power than M-to-M switches. This paper presents a cantilever shunt capacitive RF MEMS switch with characteristics such as low trigger voltage, high capacitive ratio, short switchin...
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This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm(2). The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt o...
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Radio Frequency Micro-Electro-Mechanical-Systems (RF MEMS) based switches are expected to play a key role in the field of microwave switching. Traits like low-loss performance; zero-power consumption and very low inter-modulation distortion have made these switches well suitable for high-performance microwave and millimeter-wave circuits. The design of RF MEMS switches, however, require sophist...
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ژورنال
عنوان ژورنال: Sensors
سال: 2009
ISSN: 1424-8220
DOI: 10.3390/s90604455